A p-type extrinsic semiconductor is obtained when Germanium is doped with
A p-type semiconductor is created by doping a tetravalent semiconductor (like Ge) with a trivalent impurity such as Boron.
Consider the following statements (A) and (B) and identify the correct answer.
(A) A zener diode is connected in reverse bias, when used as a voltage regulator.
(B) The potential barrier of \(p\)-\(n\) junction lies between 0.1 V to 0.3 V.
A Zener diode regulates voltage when reverse-biased in the breakdown region (A is correct). The potential barrier for a Silicon p-n junction is around 0.7 V, which is outside the 0.1 V to 0.3 V range (B is incorrect).
The electron concentration in an \(n\)-type semiconductor is the same as hole concentration in a \(p\)-type semiconductor. An external field (electric) is applied across each of them. Compare the currents in them.
The mobility of electrons (\(mu_e\)) is greater than the mobility of holes (\(mu_h\)). Since current is proportional to mobility for the same carrier concentration and electric field, the current in the \(n\)-type semiconductor is greater than that in the \(p\)-type.