P-N Junction Diode and its applications: Practice Problem & Solution
The breakdown in a reverse biased p–n junction diode is more likely to occur due to (a) large velocity of the minority charge carriers if the doping concentration is small (b) large velocity of the minority charge carriers if the doping concentration is large (c) strong electric field in a depletion region if the doping concentration is small (d) strong electric field in the depletion region if the doping concentration is large.
Short Solution (Best for NEET):
To solve this problem, we apply the core principles of P-N Junction Diode and its applications. Understanding the underlying formula is key to arriving at the correct answer below:
The breakdown in a reverse biased p–n junction diode is more likely to occur due to
a. Avalanche Breakdown - large velocity of the minority charge carriers if the doping concentration is small
b. Zener Breakdown - strong electric field in the depletion region if the doping concentration is large
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