P-N Junction Diode and its applications: Practice Problem & Solution
In the \( I-V \) characteristics of a silicon \( p-n \) junction diode, the current varies from 10 mA to 20 mA when applied voltage varies from 1 V to 1.2 V in the linear portion of forward biasing. The dynamic resistance of the diode will be:
Solution Explained:
To solve this problem, we apply the core principles of P-N Junction Diode and its applications. Understanding the underlying formula is key to arriving at the correct answer below:
Dynamic resistance is defined as \( r_d = \frac{\Delta V}{\Delta I} \). Here, \( \Delta V = 1.2 \text{ V} - 1 \text{ V} = 0.2 \text{ V} \) and \( \Delta I = 20 \text{ mA} - 10 \text{ mA} = 10 \times 10^{-3} \text{ A} \). Thus, \( r_d = \frac{0.2}{10^{-2}} = 20 \ \Omega \).
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