Rankers Physics

P-N Junction Diode and its applications: Practice Problem & Solution

The increase in the width of the depletion region in a p-n junction diode is due to : (2020)
Reverse bias only
Both forward bias and reverse bias
Increase in forward current
Forward bias only

Solution Explained:

To solve this problem, we apply the core principles of P-N Junction Diode and its applications. Understanding the underlying formula is key to arriving at the correct answer below:

In reverse bias, the applied electric field aligns with the built-in electric field of the junction, pulling majority carriers away from the junction. This widens the depletion region.[cite: 1]

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Similar Practice Questions

Explore conceptually related problems to test your knowledge.

1. p-n junction is said to be forward biased, when (1988)
2. The approximate ratio of resistances in the forward and reverse bias of the PN-junction diode is :
3. Two PN-junctions can be connected in series by three different methods as shown in the figure. If the potential difference in the junctions is the same, then the correct connections will be :
4. A silicon (Si) specimen is doped with aluminium (Al). The concentration of acceptor atoms is \(10^{18}\text{ m}^{-3}\). Given that the intrinsic carrier concentration is \(10^{16}\text{ m}^{-3}\), the concentration of electrons in the specimen is
5. Assertion (A): The number of electrons in n-type semiconductor is higher than the number of electrons in a pure silicon semiconductor. Reason (R): The law of mass action is applicable only to n-type semiconductors.