Reason (R): On raising the temperature, in metals drift velocity increases but in semiconductors more charge carriers are released.
Solution:
Concept: Temperature dependence of resistance.
Metals have a positive temperature coefficient of resistance, while semiconductors have a negative one, so (A) is true. In metals, drift velocity *decreases* with increasing temperature due to increased scattering. In semiconductors, carrier concentration increases, so (R) is false.
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