Reason (R): In n-type semiconductor majority charge carriers are free electrons while in p-type they are holes.
Solution:
When a p-n junction is forward biased, the applied voltage counteracts the internal electric field, causing majority carriers to move towards the junction and reducing the depletion region's width. Thus, Assertion (A) is true.
Reason (R) correctly states the majority carriers in n-type (electrons) and p-type (holes) semiconductors, which is also true. However, Reason (R) does not explain why the depletion region width reduces under forward bias. Hence, both are true, but R is not the correct explanation for A.
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