Depletion Region Width in Forward Bias – Rankers Physics
Topic: Semiconductor Physics
Subtopic: Properties of Semiconductors

Depletion Region Width in Forward Bias

Assertion (A): Width of depletion region is reduced in forward bias.
Reason (R): In n-type semiconductor majority charge carriers are free electrons while in p-type they are holes.
Both (A) & (R) are true and the (R) is the correct explanation of the (A)
Both (A) & (R) are true but the (R) is not the correct explanation of the (A)
(A) is true but (R) is false
Both (A) and (R) are false

Solution:

When a p-n junction is forward biased, the applied voltage counteracts the internal electric field, causing majority carriers to move towards the junction and reducing the depletion region's width. Thus, Assertion (A) is true.


Reason (R) correctly states the majority carriers in n-type (electrons) and p-type (holes) semiconductors, which is also true. However, Reason (R) does not explain why the depletion region width reduces under forward bias. Hence, both are true, but R is not the correct explanation for A.

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