NEET Physics Question - Semiconductor Physics - P-N Junction Diode and its applications

Assertion (A): GaAs is preferred for making solar panels.

Reason (R): \(\Delta E_g\) for GaAs is \(1.5\text{ eV}\), and sun's radiation has highest intensity around this energy level.

Both (A) & (R) are true and the (R) is the correct explanation of the (A)

Both (A) & (R) are true but the (R) is not the correct explanation of the (A)

(A) is true but (R) is false

Both (A) and (R) are false

Solution:

Assertion (A) is true in terms of performance; GaAs solar cells offer very high efficiency. Reason (R) is also true; the bandgap of GaAs (approx. \(1.42\text{ eV}\,) is near \(1.5\text{ eV}\), which matches well with the peak intensity of the solar spectrum. (R) correctly explains (A) as this optimal bandgap is key to its high efficiency.

Rankers Physics

GaAs Solar Panels

Solution:

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