Drift and Diffusion Current in p-n Junction – Rankers Physics

Properties of Semiconductors: Practice Problem & Solution

Assertion (A): The drift current in a p-n junction is from n-side to p-side. Reason (R): The diffusion current in a p-n junction is from p-side to n-side.  
Both (A) & (R) are true and the (R) is the correct explanation of the (A)
Both (A) & (R) are true but the (R) is not the correct explanation of the (A)
(A) is true but (R) is false
Both (A) and (R) are false

Short Solution (Best for NEET):

To solve this problem, we apply the core principles of Properties of Semiconductors. Understanding the underlying formula is key to arriving at the correct answer below:

In a p-n junction, the built-in electric field points from the n-side to the p-side, causing drift current to flow from n-side to p-side. Thus, Assertion (A) is true. Due to concentration gradients, diffusion current arises from the movement of majority carriers, resulting in a net diffusion current from p-side to n-side. Thus, Reason (R) is also true.


These are two distinct current mechanisms, and R does not explain A.

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