Rankers Physics
Topic: Semiconductor Physics
Subtopic: P-N Junction Diode and its applications

The dominant mechanism for motion of charge carriers in forward and reverse biased silicon P-N junction are :
Drift in forward bias, diffusion in reverse bias
Diffusion in forward bias, drift in reverse bias
Diffusion in both forward and reverse bias
Drift in both forward and reverse bias

Solution:

Theory: In forward biased mode diffusion current is more than drift current. Where as in reverse biased mode diffusion current decreased and become less than drift current.

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