The breakdown in a reverse biased p–n junction diode is more likely to occur due to (a) large velocity of the minority charge carriers if the doping concentration is small (b) large velocity of the minority charge carriers if the doping concentration is large (c) strong electric field in a depletion region if the doping concentration is small (d) strong electric field in the depletion region if the doping concentration is large.
Solution:
The breakdown in a reverse biased p–n junction diode is more likely to occur due to
a. Avalanche Breakdown - large velocity of the minority charge carriers if the doping concentration is small
b. Zener Breakdown - strong electric field in the depletion region if the doping concentration is large
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